| PART |
Description |
Maker |
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| BTA12-600BW |
With TO-220AB insulated package
|
Inchange Semiconductor ...
|
| PM75RLB120 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM100CSD060 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM200CSE06005 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM75RSD060 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM100RLB060 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM50RSD060 |
FLAT BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| HTP12A60 |
NON INSULATED TYPE TRIAC (TO-220 PACKAGE)
|
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
|
| PM50RSD120 |
FLAT BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| HTP4A60 |
NON INSULATED TYPE TRIAC (TO-220 PACKAGE)
|
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
|
